Npn safe operating area, Derating curve, Transient thermal impedance – Diodes ZXTC6718MC User Manual
Page 3: Thermal resistance v board area, Power dissipation v board area, Pnp safe operating area, Zxtc6718mc, Thermal characteristics and derating information
ZXTC6718MC
Document number: DS31927 Rev. 4 - 2
3 of 9
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC6718MC
Thermal Characteristics and Derating Information
0.1
1
10
0.01
0.1
1
10
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
100µ
1m
10m 100m
1
10
100
1k
0
20
40
60
80
0.1
1
10
100
0
25
50
75
100
125
150
175
200
225
100m
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.1
1
10
0.01
0.1
1
10
8sqcm 2oz Cu
One active die
100us
100ms
1s
V
CE(SAT)
Limited
1ms
NPN Safe Operating Area
Single Pulse, T
amb
=25°C
DC
10ms
I
C
C
o
lle
c
to
r C
u
rr
e
n
t (
A
)
V
CE
Collector-Emitter Voltage (V)
10sqcm 1oz Cu
One active die
10sqcm 1oz Cu
Two active die
8sqcm 2oz Cu
One active die
Derating Curve
M
a
x P
o
w
e
r Di
ss
ip
a
ti
o
n
(
W
)
Temperature (°C)
8sqcm 2oz Cu
One active die
D=0.2
D=0.5
D=0.1
Transient Thermal Impedance
Single Pulse
D=0.05
Ther
m
a
l R
e
si
st
ance
(°
C
/W
)
Pulse Width (s)
1oz Cu
Two active die
1oz Cu
One active die
2oz Cu
Once active die
2oz Cu
Two active die
Thermal Resistance v Board Area
T
h
e
rm
a
l R
e
sista
n
c
e
(°
C
/W
)
Board Cu Area (sqcm)
1oz Cu
One active die
1oz Cu
Two active die
2oz Cu
One active die
2oz Cu
Two active die
T
amb
=25°C
T
j max
=150°C
Continuous
Power Dissipation v Board Area
P
D
D
is
s
ip
at
io
n (
W
)
Board Cu Area (sqcm)
8sqcm 2oz Cu
One active die
100us
1ms
10ms
100ms
1s
DC
Single Pulse, T
amb
=25°C
V
CE(SAT)
Limited
PNP Safe Operating Area
-I
C
C
o
lle
c
to
r C
u
rr
e
n
t (
A
)
-V
CE
Collector-Emitter Voltage (V)