Diodes ZXTC2061E6 - Manual (Page 7)

ZXTC2061E6
Document Number: DS33646 Rev: 2 - 2
7 of 9
www.diodes.com
February 2013
© Diodes Incorporated
ZXTC2061E6
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Typical Electrical Characteristics – Q2 (PNP Transistor)
(@T
A
= +25°C, unless otherwise specified.)
1m 10m 100m 1 10
1m
10m
100m
1
1m 10m 100m 1 10
0.0
0.1
0.2
0.3
0.4
0.5
1m 10m 100m 1 10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1m 10m 100m 1 10
0.4
0.6
0.8
1.0
1.2
1m 10m 100m 1 10
0.2
0.4
0.6
0.8
1.0
1.2
0
200
400
600
800
1000
1200
1400
1600
I
C
/I
B
=100
V
CE(SAT)
v I
C
Tamb=25°C
I
C
/I
B
=50
I
C
/I
B
=20
I
C
/I
B
=10
- V
CE
(S
A
T
)
(
V
)
- I
C
Collector Current (A)
100°C
V
BE(SAT)
v I
C
I
C
/I
B
=10
150°C
25°C
-55°C
- V
CE
(S
A
T
)
(
V
)
- I
C
Collector Current (A)
150°C
h
FE
v I
C
V
CE
=2V
-55°C
25°C
100°C
Normalis
ed Gain
- I
C
Collector Current (A)
150°C
25°C
V
CE(SAT)
v I
C
I
C
/I
B
=10
100°C
-55°C
- V
BE
(S
AT
)
(V
)
- I
C
Collector Current (A)
150°C
V
BE(ON)
v I
C
V
CE
=2V
100°C
25°C -55°C
- V
BE
(O
N
)
(V
)
- I
C
Collector Current (A)
Ty
p
ic
al Gain
(
h FE
)