Diodes ZXTC2061E6 - Manual (Page 3)

ZXTC2061E6
Document Number: DS33646 Rev: 2 - 2
3 of 9
www.diodes.com
February 2013
© Diodes Incorporated
ZXTC2061E6
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Thermal Characteristics and Derating Information
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
80
90
100
110
0.1 1 10
10m
100m
1
10
100m 1 10
10m
100m
1
10
NPN
Tamb=25°C
50mm x 50mm 2oz FR4
One active die
R
DS(on)
Limit
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
I C
Col
le
ct
or Current
(
A
)
V
CE
Collector-Emitter Voltage (V)
0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
50mm x 50mm 2oz FR4
One activ die
50mm x 50mm 2oz FR4
One activ die, t < 5 sec
25mm x 25mm 1oz FR4
One activ die
25mm x 25mm 1oz FR4
two activ die
15mm x 15mm 1oz FR4
One activ die
Derating Curve
Temperature (°C)
M
a
x P
owe
r Di
ssi
pa
tio
n
(W
)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Safe Operating Area
Single Pulse
Tamb=25°C
50mm x 50mm
2oz FR4
One active die
Pulse Power Dissipation
Pulse Width (s)
M
ax
P
ower Di
ss
ip
at
ion (W)
D=0.1
D=0.05
Single Pulse
D=0.2
D=0.5
Tamb=25°C
50mm x 50mm 2oz FR4
One activ die
Transient Thermal Impedance
Pulse Width (s)
T
h
erm
a
l Res
is
tan
ce
(
°C/
W
)
PNP
Tamb=25°C
50mm x 50mm 2oz FR4
One active die
100µs
1ms
10ms
100ms
1s
DC
R
DS(on)
Limit
-V
CE
Collector-Emitter Voltage (V)
-I
C
Colle
ct
or
C
urr
ent
(A
)