Diodes ZXSBMR16PT8 - Manual (Page 3)

ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
3 of 6
www.diodes.com
February 2011
© Diodes Incorporated
ZXSBMR16PT8
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage V
(BR)R
40 - - V I
R
= 200
μA
Forward Voltage (Note 4) V
F
- 305 360
mV
I
F
= 50mA
- 355 410 I F = 100mA
- 405 470 I
F
= 250mA
- 485 550 I
F
= 500mA
- 570 660 I
F
= 750mA
- 640 750 I
F
= 1A
- 415 - I
F
= 500mA, T
A
= 100°C
Reverse Current I
R
- 6 10
μA
V
R
= 30V
- 370 - V R = 30V, T A = 85°C
Diode Capacitance C
D
- 16 - pF f = 1MHz, V
R
= 30V
Reverse Recovery Time trr - 3 - ns
Switched from I
F
= 100mA to
I
R
= 100mA
Measured @ I R = 10mA
di/dt = 500mA/ns.
R
source
= 6 Ω; R
load
= 10 Ω
Reverse Recovery Charge Q rr
- 210 - pC
Notes: 4. Measured under pulsed conditions. Pulse width = 300 μS. Duty cycle ≤ 2%.