Electrical characteristics (continued) – Rainbow Electronics MAX5099 User Manual
Page 3
MAX5099
Dual, 2.2MHz, Automotive Synchronous Buck
Converter with 80V Load-Dump Protection
_______________________________________________________________________________________
3
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Rising, ON/OFF = IN_HIGH, GATE rising
3.6
4.1
IN_HIGH Startup Voltage
IN_HIGH
UVLO
Falling, ON/OFF = IN_HIGH, GATE falling
3.45
V
GATE Charge Current
I
GATE_CH
V
IN_HIGH
= V
ON/OFF
= 14V,
V
GATE
= V+ = 0V
20
45
80
μA
V+ = V
IN_HIGH
= V
ON/OFF
= 4.5V,
I
GATE
= 1μA
4.0
5.3
7.5
GATE Output Voltage
V
GATE
-
V
IN_HIGH
V+ = V
IN_HIGH
= V
ON/OFF
= 14V,
I
GATE
= 1μA
9
V
GATE Turn-Off Pulldown
Current
I
GATE_PD
V
IN_HIGH
= 14V, V
ON/OFF
= 0V, V+ = 0V,
V
GATE
= 5V
3.6
mA
STARTUP/V
L
REGULATOR
V
L
Undervoltage-Lockout Trip
Level
UVLO
V
L
falling
3.9
4.1
4.3
V
V
L
Undervoltage-Lockout
Hysteresis
180
mV
V
L
Output Voltage
V
L
I
SOURCE_
= 0 to 40mA, 5.5V
≤ V+ ≤ 19V
5.0
5.2
5.5
V
V
L
LDO Short-Circuit Current
I
VL_SHORT
V+ = V
IN_HIGH
= 5.2V
130
mA
V
L
LDO Dropout Voltage
V
LDO
I
SOURCE_
= 40mA, V+ = V
IN_HIGH
= 4.5V
300
550
mV
BYPASS OUTPUT
BYPASS Voltage
V
BYPASS
I
BYPASS
= 0μA
1.98
2.00
2.02
V
BYPASS Load Regulation
ΔV
BYPASS
0 < I
BYPASS
< 100μA (sourcing)
2
5
mV
SOFT-START/SOFT-STOP
Digital Ramp Period Soft-
Start/Soft-Stop
Internal 6-bit DAC
2048
f
SW
Clock
Cycles
Soft-Start/Soft-Stop Steps
64
Steps
VOLTAGE-ERROR AMPLIFIER
FB_ Input Bias Current
I
FB_
250
nA
-40°C
≤ T
A
≤ +85°C
0.783
0.8
0.809
FB_ Input-Voltage Set Point
V
FB_
-40°C
≤ T
A
≤ +125°C
0.785
0.814
V
FB_ to COMP_
Transconductance
g
M
1.4
2.4
3.4
mS
INTERNAL MOSFETS
I
SWITCH
= 100mA, BST1/VDD1 to
V
SOURCE1
= 5.2V
195
On-Resistance High-Side
MOSFET Converter 1
R
ON1
I
SWITCH
= 100mA, BST1/VDD1 to
V
SOURCE1
= 4.5V
208
355
m
Ω
ELECTRICAL CHARACTERISTICS (continued)
(VDRV = V
L
, V+ = V
L
= IN_HIGH = 5.2V or V+ = IN_HIGH = 5.2V to 19V, EN_ = V
L
, SYNC = GND, I
VL
= 0mA, PGND = SGND,
C
BYPASS
= 0.22μF (low ESR), C
VL
= 4.7μF (ceramic), C
V+
= 1μF (low ESR), C
IN_HIGH
= 1μF (ceramic), R
IN_HIGH
= 3.9kΩ, R
OSC
= 10kΩ,
T
J
= -40°C to +125°C, unless otherwise noted.) (Note 2)