Exp 1 r z – C&H Technology CM1500HC-66R User Manual
Page 9
MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
0.1
1
10
100
100
1000
10000
Emitter Current [A]
R
e
ve
rse
R
e
co
ve
ry T
ime
[µ
s]
10
100
1000
10000
R
e
ve
rse
R
e
co
ve
ry C
u
rre
n
t [
A]
trr
Irr
V
CC
= 1800V, V
GE
= ±15V
R
G(on)
= 1.6Ω, L
S
= 100nH
Tj = 125°C, Inductive load
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1054-C 8 of 9
0
0.2
0.4
0.6
0.8
1
1.2
0.001
0.01
0.1
1
10
Time [s]
N
or
m
a
liz
ed
T
ran
si
e
nt
T
he
rm
al
im
pe
da
nc
e
Rth(j-c)Q = 8.0K/kW
Rth(j-c)R = 15.0K/kW
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
0.1
1
10
100
100
1000
10000
Emitter Current [A]
R
e
ve
rse
R
e
co
ve
ry T
ime
[µ
s]
10
100
1000
10000
R
e
ve
rse
R
e
co
ve
ry C
u
rre
n
t [
A]
trr
Irr
V
CC
= 1800V, V
GE
= ±15V
R
G(on)
= 1.6Ω, L
S
= 100nH
Tj = 150°C, Inductive load
⎪⎭
⎪
⎬
⎫
⎪⎩
⎪
⎨
⎧
=
−
∑
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
−
=
−
exp
1
R
Z
i
t
n
1
i
i
)
c
j
(
th
)
t
(
τ
1
2
3
4
R
i
[K/kW] :
0.0096
0.1893
0.4044
0.3967
τ
i
[sec] :
0.0001
0.0058
0.0602
0.3512