C&H Technology CM1500HC-66R - Manual (Page 6)

MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
4 th -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
PERFORMANCE CURVES
TRANSFER CHARACTERISTICS OUTPUT CHARACTERISTICS
(TYPICAL) (TYPICAL)
0
500
1000
1500
2000
2500
3000
0 2 4 6 8 10 12
Gate - Emitter Voltage [V]
Co
llec
to
r Cu
rr
e
n
t [
A
]
Tj = 25°C
V
CE
= V
GE
Tj = 150°C
0
500
1000
1500
2000
2500
3000
0 1 2 3 4 5 6
Collector - Emitter Voltage [V]
Co
llec
to
r Cu
rr
e
n
t [
A
]
V
GE
= 9V
V
GE
= 11V
V
GE
= 15V
V
GE
= 13V
Tj = 150°C
V
GE
= 19V
COLLECTOR-EMITTER SATURATION VOLTAGE FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL) CHARACTERISTICS (TYPICAL)
0
500
1000
1500
2000
2500
3000
0 1 2 3 4 5
Collector-Emitter Saturation Voltage [V]
Co
llec
to
r Cu
rr
e
n
t [
A
]
V
GE
= 15V
Tj = 150°C
Tj = 125°C
Tj = 25°C
0
500
1000
1500
2000
2500
3000
0 1 2 3 4 5
Emitter-Collector Voltage [V]
Emi
tte
r C
u
rre
n
t [
A
]
Tj = 150°C
Tj = 25°C
Tj = 125°C
HVM-1054-C 5 of 9