C&H Technology CM1500HC-66R - Manual (Page 10)

MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4 th -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
0
1000
2000
3000
4000
0 1000 2000 3000 4000
Collector-Emitter Voltage [V]
Co
llec
to
r Cu
rr
e
n
t [
A
]
V
CC
≤ 2500V, V
GE
= ±15V
Tj = 150°C, R
G(off)
= 5.6Ω
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
0
1000
2000
3000
4000
0 1000 2000 3000 4000
Emitter-Collector Voltage [V]
R
e
ve
rse
R
e
co
ve
ry C
u
rre
n
t [
A]
V
CC
≤ 2500V, di/dt < 9kA/µs
Tj = 150°C
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
0
5
10
15
20
0 1000 2000 3000 4000
Collector-Emitter Voltage [V]
Co
llec
tor
Cu
rr
e
n
t [
kA
]
V
CC
≤ 2500V, V
GE
= ±15V
R
G(on)
= 1.6Ω, R
G(off)
= 5.6Ω
Tj = 150°C
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1054-C 9 of 9