C&H Technology CM1500HC-66R - Manual (Page 3)

MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
4 th -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1054-C 2 of 9
MAXIMUM RATINGS
Symbol Item Conditions Ratings Unit
V
GE
= 0V, T
j
= −40…+150°C 3300
V
CES
Collector-emitter voltage
V
GE
= 0V, T
j
= −50°C 3200
V
V
GES
Gate-emitter voltage V
CE
= 0V, T
j
= 25°C ± 20 V
I
C
DC, T
c
= 95°C 1500 A
I
CM
Collector current
Pulse (Note 1) 3000 A
I
E
DC 1500 A
I
EM
Emitter current (Note 2)
Pulse (Note 1) 3000 A
P
c
Maximum power dissipation (Note 3) T
c
= 25°C, IGBT part 15600 W
V
iso
Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1 min. 6000 V
V
e
Partial discharge extinction voltage RMS, sinusoidal, f = 60Hz, Q
PD
≤ 10 pC 2600 V
T
j
Junction temperature −50 ~ +150 °C
T
op
Operating temperature −50 ~ +150 °C
T
stg
Storage temperature −55 ~ +150 °C
t
psc
Maximum short circuit pulse width V
CC
=2500V, V
CE
≤ V
CES
, V
GE
=15V, T
j
=150°C 10 µs
ELECTRICAL CHARACTERISTICS
Limits
Symbol Item Conditions
Min Typ Max
Unit
T
j
= 25°C — — 6.0
T
j
= 125°C — 6.0 — I
CES
Collector cutoff current V
CE
= V
CES
, V
GE
= 0V
T
j
= 150°C — 36.0 —
mA
V
GE(th)
Gate-emitter threshold voltage V
CE
= 10 V, I
C
= 150 mA, T
j
= 25°C 5.7 6.2 6.7 V
I
GES
Gate leakage current V
GE
= V
GES
, V
CE
= 0V, T
j
= 25°C −0.5 — 0.5 µA
C
ies
Input capacitance — 210.0 — nF
C
oes
Output capacitance — 13.0 — nF
C
res
Reverse transfer capacitance
V
CE
= 10 V, V
GE
= 0 V, f = 100 kHz
T
j
= 25°C
— 6.0 — nF
Q
g
Total gate charge V
CC
= 1800 V, I
C
= 1500 A, V
GE
= ±15 V — 16.0 — µC
T
j
= 25°C — 2.45 —
T
j
= 125°C — 3.10 3.70 V
CE(sat)
Collector-emitter saturation voltage
I
C
= 1500 A (Note 4)
V
GE
= 15 V
T
j
= 150°C — 3.25 —
V
T
j
= 25°C — 1.00 —
T
j
= 125°C — 0.95 1.25 t
d(on)
Turn-on delay time
T
j
= 150°C — 0.95 1.25
µs
T
j
= 25°C — 0.28 —
T
j
= 125°C — 0.30 0.50 t
r
Turn-on rise time
T
j
= 150°C — 0.30 0.50
µs
T
j
= 25°C — 2.10 —
T
j
= 125°C — 2.75 — E
on(10%)
Turn-on switching energy (Note 5)
T
j
= 150°C — 3.00 —
J/P
T
j
= 25°C — 2.20 —
T
j
= 125°C — 2.90 — E
on
Turn-on switching energy (Note 6)
V
CC
= 1800 V
I
C
= 1500 A
V
GE
= ±15 V
R
G(on)
= 1.6 Ω
L
s
= 100 nH
Inductive load
T
j
= 150°C — 3.20 —
J/P