C&H Technology 25MT060WFAPbF - Manual (Page 5)

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4 Revision: 30-May-08
25MT060WFAPbF
Vishay High Power Products "Full-Bridge" IGBT MTP
(Warp Speed IGBT), 50 A
Fig. 4 - Maximum Transient Thermal Impedance,
Junction to Case (Diode)
Fig. 5 - Typical Capacitance vs.
Collector to Emitter Voltage
Fig. 6 - Typical Gate Charge vs.
Gate to Emitter Voltage
Fig. 7 - Typical Switching Losses vs.
Gate Resistance
Fig. 8 - Typical Switching Losses vs.
Junction Temperature
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
10
th
J
C
0.20
0.10
D = 0.50
0.01
0.02
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
t 1 , Rectangular Pulse Duration (sec)
Thermal Response (Z
thJC
)
0.10
0.01
0.02
0.05
1 10 100 1000
VCE (V)
0
1000
2000
3000
4000
5000
6000
7000
C
a
p
a
c
it
a
n
c
e
(p
F
)
Cies
Coes
Cres
VGE = 0V, f = 1 MHZ
C
ies
= C
ge
+C
gc
, C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
0 50 100 150 200
QG, Total Gate Charge (nC)
0.0
4.0
8.0
12.0
16.0
V
G
E
,
G
a
te
-t
o
-E
m
it
te
r
V
o
lt
a
g
e
(V
)
IC= 25A
VCE = 480V
0 10 20 30 40 50 60
RG, Gate Resistance ( Ω)
0.0
0.5
1.0
1.5
S
w
it
c
h
in
g
L
o
s
s
e
s
(m
J
)
VCC = 480V
VGE = 15V
TJ = 25°C
I C = 25A
EOFF
EON
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
0.1
1
10
T
o
ta
l
S
w
it
c
h
in
g
L
o
s
s
e
s
(m
J
)
RG = 5.0Ω
VGE = 15V
VCC = 480V
IC = 50A
IC = 25A
IC = 12.5A