C&H Technology 25MT060WFAPbF - Manual (Page 4)

Document Number: 94539 For technical questions, contact: [email protected] www.vishay.com
Revision: 30-May-08 3
25MT060WFAPbF
"Full-Bridge" IGBT MTP
(Warp Speed IGBT), 50 A
Vishay High Power Products
Note
(1) Standard version only i.e. without optional thermistor
Fig. 1 - Maximum Collector Current vs.
Case Temperature
Fig. 2 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Fig. 3 - Maximum Transient Thermal Impedance,
Junction to Case (IGBT)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range T
J
- 40 - 150
°C
Storage temperature range T
Stg
- 40 - 125
Junction to case
IGBT
R
thJC
- - 0.64
°C/W Diode - - 0.9
Case to sink per module R
thCS
Heatsink compound thermal conductivity = 1 W/mK - 0.06 -
Clearance (1) Externel shortest distance in air between two terminals 5.5 - -
mm
Creepage (1)
Shortest distance along external surface of the
insulating material between 2 terminals
8 - -
Weight 66 g
T
C
Case Temperature (°C)
I
C
Maximum DC Collector Current (A)
0
20
40
60
80
100
120
140
160
0 10 20 30 40 50 60 70 80
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
1.25
1.75
2.25
2.75
V
C
E
,
C
o
lle
c
to
r-
to
E
m
it
te
r
V
o
lt
a
g
e
(V
)
IC = 50A
IC = 25A
IC =
12.5A
t
1
, Rectangular Pulse Duration (sec)
Thermal Response (Z
thJC
)
0.0001
0.001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Single Pulse
(Thermal Response)
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D =0.01