C&H Technology 25MT060WFAPbF - Manual (Page 2)

Document Number: 94539 For technical questions, contact: [email protected] www.vishay.com
Revision: 30-May-08 1
"Full-Bridge" IGBT MTP
(Warp Speed IGBT), 50 A
25MT060WFAPbF
Vishay High Power Products
FEATURES
• Generation 4 warp speed IGBT technology
• HEXFRED ® antiparallel diodes with ultrasoft
reverse recovery
• Very low conduction and switching losses
• Optional SMT thermistor
• Al
2
O
3
DBC
• Very low stray inductance design for high speed operation
• UL pending
• Operating frequencies 8 to 60 kHz > 20 kHz hard
switching, > 200 kHz resonant mode
• Totally lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
PRODUCT SUMMARY
V
CES
600 V
I
C
DC 69 A
V
CE(on)
at 25 A, 25 °C 2.22 V
MTP
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
600 V
Continuous collector current I
C
T
C
= 25 °C 69
A
T
C
= 80 °C 46
Pulsed collector current I
CM
200
Peak switching current I
LM
200
Diode continuous forward current I
F
T
C
= 100 °C 25
Peak diode forward current I
FM
200
Gate to emitter voltage V
GE
± 20
V
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500
Maximum power dissipation
per single IGBT
P
D
T
C
= 25 °C 195
W
T
C
= 100 °C 78