Cpv363m4kpbf, Vishay semiconductors – C&H Technology CPV363M4KPbF User Manual
Page 6
CPV363M4KPbF
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Vishay Semiconductors
Revision: 11-Jun-13
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Document Number: 94485
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
th
J
C
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
T
h
e
rm
a
l R
e
spo
n
se (Z
)
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
2
J
DM
thJC
C
1
10
100
0
300
600
900
1200
1500
V , Collector-to-Emitter Voltage (V)
C
, C
a
paci
tance (
pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
0
20
40
60
80
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
, G
a
te
-to
-E
m
itte
r V
o
lta
g
e
(V
)
G
GE
V
= 400V
I
= 6.0A
CC
C
R
0
10
20
30
40
50
0.0
0.2
0.4
0.6
0.8
1.0
R , Gate Resistance (
Ω)
Tot
al
S
w
it
chi
ng Losses (
m
J)
G
V = 480V
V = 15V
T = 25 C
I = 6.0A
CC
GE
J
C
°
10
Ω
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Tot
a
l Sw
it
chi
ng Losses (
m
J)
J
°
R = 23
V = 15V
V = 480V
G
GE
CC
I = 12 A
C
I = 6 A
C
I = 3 A
C
Ω