Cpv363m4kpbf, Vishay semiconductors, Rohs – C&H Technology CPV363M4KPbF User Manual
Page 2
CPV363M4KPbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-13
1
Document Number: 94485
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IGBT SIP Module
(Short Circuit Rated Ultrafast IGBT)
FEATURES
• Short circuit rated ultrafast: Optimized for high
speed over 5.0 kHz (see fig. 1 for current vs.
frequency curve), and short circuit rated to 10 μs
at 125 °C, V
GE
= 15 V
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
• HEXFRED
®
soft ultrafast diodes
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
I
RMS
per phase (1.94 kW total)
with T
C
= 90 °C
6.7 A
RMS
T
J
125 °C
Supply voltage
360 V
DC
Power factor
0.8
Modulation depth (see fig. 1)
115 %
V
CE(on)
(typical)
at I
C
= 6.0 A, 25 °C
1.72 V
Package
SIP
Circuit
Three Phase Inverter
IMS-2
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
TEST
CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
600
V
Continuous collector current, each IGBT
I
C
T
C
= 25 °C
11
A
T
C
= 100 °C
6.0
Pulsed collector current
I
CM
Repetitive rating; V
GE
= 20 V, pulse width
limited by maximum junction temperature
See fig. 20
22
A
Clamped inductive load current
I
LM
V
CC
= 80 % (V
CES
), V
GE
= 20 V,
L = 10 μH, R
G
= 22
See fig. 19
22
A
Diode continuous forward current
I
F
T
C
= 100 °C
6.1
A
Diode maximum forward current
I
FM
22
A
Short circuit withstand time
t
SC
10
μs
Gate to emitter voltage
V
GE
± 20
V
Isolation voltage
V
ISOL
Any terminal to case, t = 1 minute
2500
V
RMS
Maximum power dissipation, each IGBT
P
D
T
C
= 25 °C
36
W
T
C
= 100 °C
14
Operating junction and
storage temperature range
T
J
, T
Stg
- 40 to + 150
°C
Soldering temperature
For 10 s, (0.063" (1.6 mm) from case)
300
Mounting torque
6-32 or M3 screw
5 to 7
(0.55 to 0.8)
lbf
in
(N
m)