C&H Technology CPV363M4KPbF - Manual (Page 5)

CPV363M4KPbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-13 4 Document Number: 94485
For technical questions within your region: [email protected] , [email protected] , [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of Fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
0.1 1 10 100
0
2
4
6
8
10
12
f, Frequency (KHz)
L
O
AD CURRENT (
A
)
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
Total Output Power (kW)
2.92
2.33
1.75
1.17
0.58
0.00
3.50
0.1
1
10
100
1 10
V , Collector-to-Emitter Voltage (V)
I ,
C
o
ll
e
c
to
r-t
o
-E
m
it
te
r C
u
rre
n
t (A
)
CE
C
V = 15V
20μs PULSE WIDTH GE
T = 25 C
J
o
T = 150 C
J
o
0.1
1
10
100
5 10 15
V , Gate-to-Emitter Voltage (V)
I , C
o
lle
c
to
r-to
-E
m
itte
r C
u
rre
n
t (A
)
GE
C
V = 50V
5μs PULSE WIDTH CC
T = 25 C
J
o
T = 150 C
J
o
0
3
6
9
12
25 50 75 100 125 150
Ma
x
im
u
m
DC
C
o
lle
c
tor
Cu
rr
ent (
A
)
T , Case Temperature (°C)
C
V = 15V GE
-60 -40 -20 0 20 40 60 80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V
, Co
lle
c
to
r-
to
-E
m
itte
r V
o
lta
g
e
(V
)
J
°
CE
V = 15V
80 us PULSE WIDTH GE
I = A 12
C
I = A 6
C
I = A 3
C