C&H Technology CPV363M4KPbF - Manual (Page 4)

CPV363M4KPbF
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Vishay Semiconductors
Revision: 11-Jun-13 3 Document Number: 94485
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

SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g I
C
= 6 A
V
CC
= 400 V 
See fig. 8
- 61 91
nC Gate to emitter charge (turn-on) Q
ge
- 7.4 11
Gate to collector charge (turn-on) Q
gc
- 27 40
Turn-on delay time t
d(on)
T
J
= 25 °C

I
C
= 6.0 A, V
CC
= 480 V 
V
GE
= 15 V, R
G
= 23 
Energy losses include “tail” and diode 
reverse recovery

See fig. 9, 10, 18
- 55 -
ns
Rise time t
r
- 24 -
Turn-off delay time t
d(off)
- 107 160
Fall time t
f
- 92 140
Turn-on switching loss E
on
- 0.28 -
mJ Turn-off switching loss E
off
- 0.10 -
Total switching loss E
ts
- 0.39 0.50
Short circuit withstand time t
SC
V
CC
= 360 V, T
J
= 125 °C

V
GE
= 15 V, R
G
= 23
, V
CPK
< 500 V
10 - - μs
Turn-on delay time t
d(on) T
J
= 150 °C 
I
C
= 6.0 A, V
CC
= 480 V

V
GE
= 15 V, R
G
= 23

Energy losses include “tail” and

diode reverse recovery 
See fig. 10, 11, 18
- 54 -
ns
Rise time t
r
- 24 -
Turn-off delay time t
d(off)
- 161 -
Fall time t
f
- 244 -
Total switching loss E
ts
- 0.60 - mJ
Input capacitance C
ies V
GE
= 0 V 
V
CC
= 30 V

ƒ = 1.0 MHz
See fig. 7
- 740 -
pF Output capacitance C
oes
- 100 -
Reverse transfer capacitance C
res
- 9.3 -
Diode reverse recovery time t
rr
T
J
= 25 °C
See fig. 14
I
F
= 12 A

V
R
= 200 V 
dI/dt = 200 A/μs
- 42 60
ns
T
J
= 125 °C - 80 120
Diode peak reverse recovery
current
I
rr
T
J
= 25 °C
See fig. 15
- 3.5 6.0
A
T
J
= 125 °C - 5.6 10
Diode reverse recovery charge Q
rr
T
J
= 25 °C
See fig. 16
- 80 180
nC
T
J
= 125 °C - 220 600
Diode peak rate of fall of recovery 
during t
b
dI
(rec)M
/dt
T
J
= 25 °C
See fig. 17
- 180 -
A/μs
T
J
= 125 °C - 120 -