C&H Technology GB200TS60NPbF - Manual (Page 6)

Document Number: 94503 For technical questions, contact: [email protected] www.vishay.com
Revision: 07-May-08 5
GB200TS60NPbF
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 209 A
Vishay High Power Products
Fig. 11 - Typical Diode I
RR
vs. I
F
T
J
= 125 °C
Fig. 12 - Typical Diode I
RR
vs. R
G
T
J
= 125 °C, I
F
= 200 A
Fig. 13 - Typical Diode I
RR
vs. dI
F
/dt
T
J
= 125 °C, V
CC
= 360 V, I
F
= 200 A, V
GE
= 15 V
Fig. 14 - Typical Switching Losses vs. Gate Resistance
T
J
= 125 °C, L = 200 µH, R
G
= 10 Ω,
V
CC
= 360 V, V
GE
= 15 V
Fig. 15 - Typical Switching Losses vs.
Junction Temperature;
L = 200 µH, R
G
= 10
Ω, V
CC
= 360 V, V
GE
= 15 V
Fig. 16 - Typical Switching Losses vs.
Collector to Emitter Current;
T
J
= 125 °C,R
G1
= 10
Ω, R
G2
= 0
Ω, V
CC
= 360 V, V
GE
= 15 V
I RR
(A)
I
F
(A)
40 80 120 160 200
20
30
40
50
60
70
80
90
100
10 ohm
27 ohm
47 ohm
0 10 20 30 40 50
30
40
50
60
70
80
90
100
I RR
(A)
R
G
( Ω)
600 700 800 900 1000 1100 1200 1300
50
60
70
80
90
100
I RR
(A)
dI
F
/ dt (A/μs)
5 10 15 20 25 30 35 40 45 50
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
Total Switching Losses (mJ)
R
G
( Ω)
0 25 50 75 100 125
1
10
100
Ic = 100A
Ic = 200A
Ic = 50A
Total Switching Losses (mJ)
T
J
- Junction Temperature (°C)
40 60 80 100 120 140 160 180 200 220
2
3
4
5
6
7
8
9
10
11
12
Total Switching Losses (mJ)
I
C
(A)