C&H Technology GB200TS60NPbF - Manual (Page 2)

Document Number: 94503 For technical questions, contact: [email protected] www.vishay.com
Revision: 07-May-08 1
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 209 A
GB200TS60NPbF
Vishay High Power Products
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: Optimized for hard switching operating
frequencies 8 to 60 kHz
• Low V
CE(on)
• 10 µs short circuit capability
• Square RBSOA
• Positive V
CE(on)
temperature coefficient
• HEXFRED ® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al
2
O
3
DBC
• UL pending
• Designed for industrial level and lead (Pb)-free
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
PRODUCT SUMMARY
V
CES
600 V
I
C
DC 209 A
V
CE(on)
at 100 A, 25 °C 2.6 V
INT-A-PAK
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
600 V
Continuous collector current I
C
T
C
= 25 °C 209
A
T
C
= 80 °C 142
Pulsed collector current I
CM
400
Clamped inductive load current I
LM
400
Diode continuous forward current I
F
T
C
= 25 °C 178
T
C
= 80 °C 121
Gate to emitter voltage V
GE
± 20 V
Maximum power dissipation P
D
T
C
= 25 °C 781
W
T
C
= 80 °C 438
Isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V