C&H Technology GB200TS60NPbF - Manual (Page 5)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94503
4 Revision: 07-May-08
GB200TS60NPbF
Vishay High Power Products INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT),
209 A
Fig. 5 - Diode Forward Characteristics,
t
p
= 500 µs
Fig. 6 - Maximum Collector Current vs.
Case Temperature
Fig. 7 - Typical Energy Loss vs. I
C
T
J
= 125 °C, L = 200 µH, V
CC
= 360 V,
R
G
= 10
Ω, V
GE
= 15 V
Fig. 8 - Typical Switching Time vs. I
C
T
J
= 125 °C, L = 200 µH, V
CC
= 360 V,
R
G
= 10 Ω, V
GE
= 15 V
Fig. 9 - Typical Energy Loss vs. R
G
T
J
= 125 °C, L = 200 µH, V
CC
= 360 V,
I
CE
= 200 A, V
GE
= 15 V
Fig. 10 - Typical Switching Time vs. R
G
T
J
= 125 °C, L = 200 µH, V
CC
= 360 V,
I
CE
= 200 A, V
GE
= 15 V
I F
(A)
V
F
(V)
0.0 0.5 1.0 1.5 2.0
0
50
100
150
200
Tj = 25°C
Tj = 125°C
T
C
, Case Temperature (°C)
0 50 100 150 200 250
0
20
40
60
80
100
120
140
160
DC
Maximum DC Collector Current (A)
Energy (mJ)
I
C
(A)
50 100 150 200
0
1000
2000
3000
4000
5000
6000
7000
8000
Eon
Eoff
Switching Time (ns)
I
C
(A)
40 60 80 100 120 140 160 180 200 220
10
100
1000
td(off)
tr
td(on)
tf
5 10 15 20 25 30 35 40 45 50
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
Eon
Eoff
Energy (mJ)
R
G
( Ω)
0 10 20 30 40 50
10
100
1000
10000
td(off)
tr
td(on)
tf
Energy Time (ns)
R
G
( Ω)