C&H Technology GB200TS60NPbF - Manual (Page 4)

Document Number: 94503 For technical questions, contact: [email protected] www.vishay.com
Revision: 07-May-08 3
GB200TS60NPbF
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 209 A
Vishay High Power Products
Fig. 1 - Typical IGBT Output Characteristics
T
J
= 25 °C, t
p
= 500 µs
Fig. 2 - Typical IGBT Output Characteristics
T
J
= 125 °C, t
p
= 500 µs
Fig. 3 - Typical Transfer Characteristics
V
CE
= 20 V, t
p
= 500 µs
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
THERMAL - MECHANICAL CHARACTERISTICS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Operating junction and storage temperature range T
J
, T
Stg
- 40 - 150 °C
Junction to case per leg
IGBT
R
thJC
- 0.13 0.16
°C/W Diode - 0.19 0.32
Case to sink per module R
thCS
- 0.1 -
Mounting torque
case to heatsink - - 4
Nm
case to terminal 1, 2, 3 - - 3
Weight - 185 - g
I cE
(A)
V
CE
(V)
0 1 2 3 4
0
50
100
150
200
250
300
Vge = 9V
Vge = 12V
Vge = 15V
Vge = 18V
I cE
(A)
0 1 2 3 4 5
0
50
100
150
200
250
300
Vge = 9V
Vge = 18V
Vge = 15V
Vge = 12V
V
CE
(V)
I cE
(A)
V
GE
(V)
0 1 2 3 4 5 6 7 8 9
0
50
100
150
200
250
300
Tj = 25°C
Tj = 125°C
0 40 80 120 160
1
1.5
2
2.5
3
3.5
Ic = 50A
Ic = 100A
Ic = 200A
T
J
, Junction Temperature (°C)
V
CE
, Collector -to-Emitter Voltage (V)