C&H Technology PS11011 - Manual (Page 4)

MITSUBISHI SEMICONDUCTOR
PS11011
FLAT-BASE TYPE
INSULATED TYPE
Jan. 2000
— 0.1
V CC
≤
400V, Input = ON (one-shot)
Tj = 125 ° C start
13.5V
≤
V DH = V DB
≤
16.5V
V CC
≤ 400V, Tj ≤ 125 ° C,
Ic < I OL (CL) operation level, Input = ON
13.5V ≤ V DH = V DB
≤ 16.5V
V
V
—
V FBr
I RRM
V FR
ton
tc(on)
toff
tc(off)
trr
TC
7.3
6.1
7.3
6.1
4.8
0.053
Collector-emitter saturation voltage
FWDi forward voltage
Brake IGBT
Collector-emitter saturation voltage
Brake diode forward voltage
Converter diode reverse current
Converter diode voltage
Switching times
FWD reverse recovery time
V CE(sat)
V EC
Ratings
°
C/W
° C/W
°
C/W
° C/W
°
C/W
° C/W
—
—
—
—
—
—
Junction to case Thermal
Resistance
Condition Symbol Item Ratings Unit
(Note 2)
—
(Fig. 3)
60 Hz sinusoidal AC applied between all terminals and
the base plate for 1 minute.
Mounting screw: M3.5
T j
T stg
T C
V iso
—
Junction temperature
Storage temperature
Module case operating temperature
Isolation voltage
Mounting torque
–20 ~ +125
–40 ~ +125
–20 ~ +100
2500
0.78 ~ 1.27
°
C
° C
°
C
Vrms
kg·cm
TOTAL SYSTEM
Note 2) The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation. How-
ever, these power elements can endure junction temperature as high as 150
°
C instantaneously . To make use of this additional tem-
perature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information is requested
to be provided before use.
Condition Symbol Item
Ratings
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Brake IGBT
Brake FWDi
Converter Di (1/6)
Case to fin, thermal grease applied (1 Module)
Rth(j-c) Q
Rth(j-c) F
Rth(j-c) QB
Rth(j-c) FB
Rth(j-c) FR
Rth(c-f)
Min.
THERMAL RESISTANCE
Typ. Max.
—
—
—
—
—
—
Unit
(Fig. 3)
CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)
V DH = V DB = 15V, Input = ON, Tj = 25 ° C, I C = 2A
Condition Symbol Item
Min. Typ. Max.
Unit
• No destruction
• F
O output by protection operation
ELECTRICAL CHARACTERISTICS (Tj = 25
°
C, V DH = 15V, V DB = 15V unless otherwise noted)
Contact Thermal Resistance
Tj = 25 ° C, I C = –2A, Input = OFF
• No destruction
• No protecting operation
• No F
O output
V CE(sat)Br V DH = 15V, Input = ON, Tj = 25
°
C, I C = 2A
Tj = 25 ° C, I F = 2A, Input = OFF
V R = V RRM , Tj = 125
°
C
Tj = 25 ° C, I F = 5A
1/2 Bridge inductive load, Input = ON
V CC = 300V, Ic = 2A, Tj = 125
°
C
V DH = 15V, V DB = 15V
Note : ton, toff include delay time of the internal control
circuit
Short circuit endurance
(Output, Arm, and Load,
Short Circuit Modes)
Switching SOA
—
—
—
—
—
0.3
—
—
—
—
—
—
—
—
—
—
0.6
0.2
1.1
0.35
2.9
2.9
3.5
2.9
8
1.5
1.5
0.6
1.8
1.0
V
V
mA
V
µ
s
µ
s
µ s
µ
s
µ
s