Vs-gb90da60u, Vishay semiconductors – C&H Technology VS-GB90DA60U User Manual
Page 7
VS-GB90DA60U
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Vishay Semiconductors
Revision: 19-Sep-12
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Document Number: 94771
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Fig. 16 - Maximum Thermal Impedance Z
thJC
Characteristics, IGBT
Fig. 17 - Maximum Thermal Impedance Z
thJC
Characteristics, Diode
Fig. 18 - IGBT Reverse BIAS SOA, T
J
= 150 °C, V
GE
= 15 V
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
D = 0.75
D = 0.50
D = 0.25
D = 0.1
D = 0.05
D = 0.02
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
D = 0.75
D = 0.50
D = 0.25
D = 0.1
D = 0.05
D = 0.02
DC
I
C
(A)
1
10
100
1000
0
1
10
100
1000
V
CE
(V)