Vs-gb90da60u, Vishay semiconductors – C&H Technology VS-GB90DA60U User Manual
Page 6
VS-GB90DA60U
www.vishay.com
Vishay Semiconductors
Revision: 19-Sep-12
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Document Number: 94771
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Fig. 11 - Typical IGBT Energy Loss vs. R
g
T
J
= 125 °C, I
C
= 100 A, L = 500 μH,
V
CC
= 360 V, V
GE
= 15 V, Diode used: 60APH06
Fig. 12 - Typical IGBT Switching Time vs. R
g
T
J
= 125 °C, L = 500 μH, V
CC
= 360 V,
I
C
= 100 A, V
GE
= 15 V, Diode used: 60APH06
Fig. 13 - Typical Reverse RecoveryTime vs. dI
F
/dt, of Diode
Fig. 14 - Typical Stored Charge vs. dI
F
/dt of Diode
Fig. 15 - Typical Reverse Recovery Current vs. dI
F
/dt of Diode
R
g
(
Ω)
Energy Losses (mJ)
0.5
1
1.5
2
2.5
3
3.5
4
0
0 10 20 30 40 50
E
off
E
on
R
g
(
Ω)
0.01
0.1
1
0
10
20
30
40
50
60
S
witching Time (μs)
t
d(off)
t
d(on)
t
f
t
r
40
60
80
100
120
140
160
180
200
100
1000
t
rr
(ns)
di
F
/dt (A/μs)
25 °C
125 °C
I
F
= 50 A
V
R
= 200 V
0
500
1000
1500
2000
100
1000
Q
rr
(nC)
di
F
/dt (A/μs)
25 °C
125 °C
I
F
= 50 A
V
R
= 200 V
I
rr
(A)
di
F
/dt (A/μs)
0
5
10
15
20
25
30
35
100
1000
I
F
= 50 A
V
R
= 200 V
25 °C
125 °C