C&H Technology VS-GB90DA60U - Manual (Page 5)

VS-GB90DA60U
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Vishay Semiconductors
Revision: 19-Sep-12 4 Document Number: 94771
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Fig. 5 - Typical IGBT Transfer Characteristics
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 7 - Typical IGBT Threshold Voltage
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction
Temperature, V
GE
= 15 V
Fig. 9 - Typical IGBT Energy Losses vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 360 V,
R
g
= 5
, V
GE
= 15 V, Diode used: 60APH06
Fig. 10 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 360 V,
R
g
= 5 , V
GE
= 15 V, Diode used: 60APH06
V
GE
- Gate-to-Emitter Voltage (V)
I C
-
Collector
-to-Emitter Curr
ent (A)
0
20
40
60
80
100
120
140
160
3.0 3.5 4.0 4.5 5.0 6.0 5.5 6.5
T
J
= 150 °C
T
J
= 25 °C
T
J
= 125 °C
V
CES
- Collector-to-Emitter Voltage (V)
I CE
S
-
Collector Curr
ent (mA)
0.0001
0.001
0.01
0.1
1
10
100
0 100 200 300 400 500 600
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
V
G
ETH
-
Thr
eshol
d
V
o
ltage (V)
I
C
(mA)
5
4
4.5
3
3.5
2
2.5
1
1.5
0.20 0.40 0.60 0.80 1.00
T
J
=125 °C
T
J
= 25 °C
V
CE
-
Collector
-to-Emitter V
o
ltage (V)
T
J
- Junction Temperature (V)
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
0 20 40 60 80 100 120 140 160
Ic = 30 A
Ic = 50 A
Ic = 100 A
Ic = 75 A
I
C
- Collector Current (A)
S
witching Energy (mJ)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
E
on
E
off
10 20 30 40 50 60 70 80 90 100 110 120
I
C
- Collector Current (A)
S
witching Time (μs)
0.1
1
0.01
0 20 40 60 80 100 120
t
d(off)
t
d(on)
t
f
t
r