Vs-gb90da60u, Vishay semiconductors – C&H Technology VS-GB90DA60U User Manual
Page 2
VS-GB90DA60U
www.vishay.com
Vishay Semiconductors
Revision: 19-Sep-12
1
Document Number: 94771
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 90 A
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
• HEXFRED
®
antiparallel diodes with ultrasoft
reverse recovery
• Fully isolated package
• Very low internal inductance (
5 nH typical)
• Industry standard outline
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Higher switching frequency up to 150 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
PRODUCT SUMMARY
V
CES
600 V
I
C
DC
90 A at 90 °C
V
CE(on)
typical at 100 A, 25 °C
2.40 V
I
F
DC
108 A at 90 °C
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
600
V
Continuous collector current
I
C
T
C
= 25 °C
147
A
T
C
= 90 °C
90
Pulsed collector current
I
CM
300
Clamped inductive load current
I
LM
300
Diode continuous forward current
I
F
T
C
= 25 °C
180
T
C
= 90 °C
108
Gate-to-emitter voltage
V
GE
± 20
V
Power dissipation, IGBT
P
D
T
C
= 25 °C
625
W
T
C
= 90 °C
300
Power dissipation, diode
P
D
T
C
= 25 °C
379
T
C
= 90 °C
182
Isolation voltage
V
ISOL
Any terminal to case, t = 1 min
2500
V