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Vishay semiconductors – C&H Technology VS-GT100DA120U User Manual

Page 9

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VS-GT100DA120U

www.vishay.com

Vishay Semiconductors

Revision: 13-Sep-13

8

Document Number: 93196

For technical questions within your region:

[email protected]

,

[email protected]

,

[email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

ORDERING INFORMATION TABLE

CIRCUIT CONFIGURATION

-

Insulated Gate Bipolar Transistor (IGBT)

-

T = Trench IGBT technology

-

Current rating (100 = 100 A)

-

Circuit configuration (D = Single switch with antiparallel diode)

-

Package indicator (A = SOT-227)

-

Voltage rating (120 = 1200 V)

-

Speed/type (U = Ultrafast)

Device code

G

T

100

D

A

120

U

2

3

4

5

6

7

8

5

1

3

2

4

6

7

8

1

-

Vishay Semiconductors product

VS-

3 (C)

2 (G)

1, 4 (E)

LINKS TO RELATED DOCUMENTS

Dimensions

www.vishay.com/doc?95036

Packaging information

www.vishay.com/doc?95037