C&H Technology VS-GT100DA120U - Manual (Page 3)

VS-GT100DA120U
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Vishay Semiconductors
Revision: 13-Sep-13 2 Document Number: 93196
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ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
BR(CES)
V
GE
= 0 V, I
C
= 250 μA 1200 - -
V Collector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 100 A - 1.73 2.1
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C - 1.98 2.2
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 7.5 mA 4.9 5.9 7.9
Temperature coefficient of

threshold voltage
V
GE(th)
/
T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C) - -17.6 - mV/°C
Collector to emitter leakage current I
CES
V
GE
= 0 V, V
CE
= 1200 V - 0.6 100 μA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C - 0.6 10 mA
Forward voltage drop V
FM
I
F
= 40 A, V
GE
= 0 V - 2.81 3.3
V
I
F
= 40 A, V
GE
= 0 V, T
J
= 125 °C - 3.07 3.4
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 200 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on switching loss E
on I
C
= 100 A, V
CC
= 720 V,
V
GE
= 15 V, R
g
= 5

L = 500 μH, T
J
= 25 °C
Energy losses
include tail and
diode recovery
(see fig. 20)
- 5.2 -
mJ
Turn-off switching loss E
off
- 7.1 -
Total switching loss E
tot
- 12.3 -
Turn-on switching loss E
on
I
C
= 100 A, V
CC
= 720 V,
V
GE
= 15 V, R
g
= 5  
L = 500 μH, T
J
= 125 °C
- 6.1 -
Turn-off switching loss E
off
- 9.8 -
Total switching loss E
tot
- 15.9 -
Turn-on delay time t
d(on)
- 350 -
ns
Rise time t
r
- 75 -
Turn-off delay time t
d(off)
- 374 -
Fall time t
f
- 493 -
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 450 A, R
g
= 22 
V
GE
= 15 V to 0 V, V
CC
= 900 V, 
V
P
= 1200 V, L = 500 μH
Fullsquare
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs, V
rr
= 400 V
- 164 194 ns
Diode peak reverse current I
rr
- 12 15 A
Diode recovery charge Q
rr
- 994 1455 nC
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs,

V
rr
= 400 V, T
J
= 125 °C
- 230 273 ns
Diode peak reverse current I
rr
- 16.5 20 A
Diode recovery charge Q
rr
- 1864 2730 nC
Short circuit safe operating area SCSOA
T
J
= 150 °C, R
g
= 22
,
V
GE
= 15 V to 0 V, V
CC
= 900 V,

V
p
= 1200 V
10 μs