C&H Technology VS-GT100DA120U - Manual (Page 5)

VS-GT100DA120U
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Vishay Semiconductors
Revision: 13-Sep-13 4 Document Number: 93196
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Fig. 5 - Typical Diode Forward Characteristics
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 7 - Typical IGBT Threshold Voltage
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V
GE
= 15 V
Fig. 9 - Typical IGBT Energy Loss vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 720 V,
R
g
= 5 , V
GE
= 15 V
Fig. 10 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 720 V,
R
g
= 5 , V
GE
= 15 V
I F
(A)
V
FM
(V)
0 7 1 2 3 4 5 6
0
93196_05
200
100
75
175
50
150
25
125
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
I CE
S
(mA)
V
CES
(V)
100 1300 300 500 700 900 1100
0.00001
93196_06
10
0.1
0.01
0.001
0.0001
1
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
V
geth
(V)
I
C
(mA)
0 8 1 2 4 6 3 5 7
3.0
3.5
4.0
4.5
5.0
5.5
93196_07
6.0
T
J
= 25 °C
T
J
= 125 °C
V
CE
(V)
T
J
(°C)
20 160 40 80 120 60 100 140
1.00
1.50
2.00
93196_08
2.75
1.25
1.75
2.25
2.50
100 A
150 A
50 A
27 A
Energy (mJ)
I
C
(A)
20 30 50 90 70 40 60 100 80 110
1
93196_09
11
5
9
7
3
6
10
8
4
2
E
on
E
off
S
witching Time (ns)
I
C
(A)
20 30 50 70 90 60 80 100 40 110
10
93196_10
1000
100
t
d(off)
t
d(on)
t
f
t
r