Vishay semiconductors – C&H Technology VS-GT100DA120U User Manual
Page 6
VS-GT100DA120U
www.vishay.com
Vishay Semiconductors
Revision: 13-Sep-13
5
Document Number: 93196
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Fig. 11 - Typical IGBT Energy Loss vs. R
g
T
J
= 125 °C, I
C
= 100 A, L = 500 μH,
V
CC
= 720 V, V
GE
= 15 V
Fig. 12 - Typical IGBT Switching Time vs. R
g
T
J
= 125 °C, L = 500 μH, V
CC
= 720 V,
I
C
= 100 A, V
GE
= 15 V
Fig. 13 - Typical t
rr
Diode vs. dI
F
/dt
V
rr
= 400 V, I
F
= 50 A
Fig. 14 - Typical I
rr
Diode vs. dI
F
/dt
V
rr
= 400 V, I
F
= 50 A
Fig. 15 - Typical Q
rr
Diode vs. dI
F
/dt
V
rr
= 400 V, I
F
= 50 A
Energy (mJ)
R
g
(
Ω)
0
10
20
40
30
50
5
93196_11
40
20
35
30
25
15
10
E
on
E
off
S
witching Time (ns)
R
g
(
Ω)
0
10
30
40
20
50
10
93196_12
10 000
1000
100
t
d(off)
t
d(on)
t
f
t
r
t
rr
(ns)
dI
F
/dt (A/μs)
100
93196_13
1000
90
310
150
190
270
130
110
170
230
290
250
210
T
J
= 125 °C
T
J
= 25 °C
I
rr
(A)
dI
F
/dt (A/μs)
100
93196_14
1000
0
45
25
35
40
20
30
10
15
5
T
J
= 25 °C
T
J
= 125 °C
Q
rr
(nC)
dI
F
/dt (A/μs)
100
1000
0
93196_15
3000
1000
1500
2500
2000
500
T
J
= 125 °C
T
J
= 25 °C