Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GT100DA120U User Manual
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VS-GT100DA120U
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Vishay Semiconductors
Revision: 13-Sep-13
3
Document Number: 93196
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Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - IGBT Reverse Bias SOA
T
J
= 150 °C, V
GE
= 15 V
Fig. 3 - Typical IGBT Collector Current Characteristics
V
GE
= 15 V
Fig. 4 - Maximum DC Forward Current vs.
Case Temperature
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS MIN.
TYP.
MAX.
UNITS
Junction and storage temperature range
T
J
, T
Stg
-40
-
150
°C
Junction to case
IGBT
R
thJC
-
-
0.14
°C/W
Diode
-
-
0.71
Case to heatsink
R
thCS
Flat, greased surface
-
0.1
-
Weight
-
30
-
g
Mounting torque
-
-
1.3
Nm
Case style
SOT-227
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
0
93196_01
40
80
120
200
160
240
280
0
160
100
120
140
20
40
60
80
IGBT DC
I
C
(A)
V
CE
(V)
1
10
100
1000
10 000
0.01
0.1
1
93196_02
1000
10
100
I
C
(A)
V
CE
(V)
0
4.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
93196_03
300
100
200
275
75
175
250
50
150
225
25
125
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
40
20
10
30
50
60
0
100
160
180
0
40
60
140
80
120
20
93196_04
Diode DC