C&H Technology VS-GB100TH120U - Manual (Page 6)

VS-GB100TH120U
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Vishay Semiconductors
Revision: 20-Sep-12 5 Document Number: 93413
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Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
F
Fig. 9 - Diode Switching Loss vs. R
g
Fig. 10 - Diode Transient Thermal Impedance
I F
(A)
V
F
(V)
0 3.0 1.0 2.0
0
50
25
150
100
200
75
175
125
T
J
= 125 °C
T
J
= 25 °C
2.5 0.5 1.5
I
F
(V)
E (mJ)
0 50 100 150 200
0
2
4
6
8
10
12
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 5.6 Ω
V
CC
= 600 V
E
rec
E (mJ)
R
g
( Ω)
0 60 10 20 30 40 50
0
1
2
3
5
4
6
7
8
V
GE
= ± 15 V
T
J
= 125 °C
V
CC
= 600 V
I
F
= 100 A
E
rec
t (s)
Z
thJC
- Thermal Impedance (K/W)
10 0
10 -1
10 -2
10 -3
10 1 10 -0 10 -1 10 -2 10 -3
DIODE