Vishay semiconductors, Igbt electrical specifications (t, Switching characteristics – C&H Technology VS-GB100TH120U User Manual
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VS-GB100TH120U
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Vishay Semiconductors
Revision: 20-Sep-12
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Document Number: 93413
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IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS MIN.
TYP.
MAX.
UNITS
Collector to emitter breakdown voltage
V
(BR)CES
T
J
= 25 °C
1200
-
-
V
Collector to emitter voltage
V
CE(on)
V
GE
= 15 V, I
C
= 100 A, T
J
= 25 °C
-
3.10
3.60
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C
-
3.45
-
Gate to emitter threshold voltage
V
GE(th)
V
CE
= V
GE
, I
C
= 1 mA, T
J
= 25 °C
4.4
4.9
6.0
Zero gate voltage collector current
I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C
-
-
5.0
mA
Gate to emitter leakage current
I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C
-
-
400
nA
SWITCHING CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS MIN.
TYP.
MAX.
UNITS
Turn-on delay time
t
d(on)
V
CC
= 600 V, I
C
= 100 A, R
g
= 5.6
,
V
GE
= ± 15 V, L = 200 nH, T
J
= 25 °C
-
300
-
ns
Rise time
t
r
-
64
-
Turn-off delay time
t
d(off)
-
340
-
Fall time
t
f
-
105
-
Turn-on switching loss
E
on
-
4.76
-
mJ
Turn-off switching loss
E
off
-
4.25
-
Turn-on delay time
t
d(on)
V
CC
= 600 V, I
C
= 100 A, R
g
= 5.6
,
V
GE
= ± 15 V, L = 200 nH, T
J
= 125 °C
-
320
-
ns
Rise time
t
r
-
65
-
Turn-off delay time
t
d(off)
-
350
-
Fall time
t
f
-
132
-
Turn-on switching loss
E
on
-
7.20
-
mJ
Turn-off switching loss
E
off
-
5.50
-
Short circuit withstand time
t
SC
T
J
= 125 °C
-
-
10
μs
Input capacitance
C
ies
V
GE
= 0 V, V
CE
= 20 V, f = 1.0 MHz
-
8.45
-
nF
Output capacitance
C
oes
-
0.76
-
Reverse transfer capacitance
C
res
-
0.31
-
SC data
I
SC
t
p
10 μs, V
GE
= ± 15 V, V
CC
= 600 V,
V
CEM
1200 V, T
J
= 25 °C
-
900
-
Internal gate resistance
R
GINT
-
2.4
-
Stray inductance
L
CE
-
-
18
nH
Module lead resistance, terminal to chip
R
CC’+EE’
-
0.32
-
m