C&H Technology VS-GB100TH120U - Manual (Page 5)

VS-GB100TH120U
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Vishay Semiconductors
Revision: 20-Sep-12 4 Document Number: 93413
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Fig. 3 - Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
g
Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
E
on
, E
off
(mJ)
I
C
(A)
0 100 200 50 150
0
5
10
15
25
20 V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 5.6 Ω
V
CC
= 600 V
E
on
E
off
E
on
, E
off
(mJ)
R
g
( Ω)
0 60 10 20 30 40 50
0
5
10
15
25
20
30
35
40
E
off
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 100 A
V
CC
= 600 V
E
on
V
CE
(V)
I C
(A)
0 350 700 1050 1400
0
50
100
150
200
250
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 5.6 Ω
Module
Chip
t (s)
Z
thJC
- Thermal Impedance (K/W)
10 0
10 -1
10 -2
10 -3
10 -1 10 -2
10 -3 10 -4 10 -5
IGBT