Vishay semiconductors, Diode electrical specifications, Thermal and mechanical specifications – C&H Technology VS-GB100TH120U User Manual
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VS-GB100TH120U
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Vishay Semiconductors
Revision: 20-Sep-12
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Document Number: 93413
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
DIODE ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Diode forward voltage
V
F
I
F
= 100 A
T
C
= 25 °C
-
1.82
2.22
V
T
C
= 125 °C
-
1.95
-
Diode reverse recovery charge
Q
rr
I
F
= 100 A, V
R
= 600 V,
dI
F
/dt = - 1900 A/μs,
V
GE
= - 15 V
T
C
= 25 °C
-
5.4
-
μC
T
C
= 125 °C
-
11.2
-
Diode peak reverse recovery current
I
rr
T
C
= 25 °C
-
81
-
A
T
C
= 125 °C
-
101
-
Diode reverse recovery energy
t
rr
T
C
= 25 °C
-
3.45
-
mJ
T
C
= 125 °C
-
6.57
-
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction temperature range
T
J
- 40
-
150
°C
Storage temperature range
T
Stg
- 40
-
125
Junction to case
IGBT
R
thJC
-
-
1.41
°C/W
Diode
-
-
0.225
Case to sink
R
thCS
Conductive grease applied
-
0.035
-
Mounting torque
Power terminal screw: M5
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 6.0
Weight
300
g
I
C
(A)
V
CE
(V)
0
3.0
1.0
2.0
4.0
5.0
0
50
25
150
100
200
75
175
125
T
J
= 125 °C
T
J
= 25 °C
V
GE
= 15 V
I
C
(A)
V
GE
(V)
5
7
10
6
8
11
9
200
60
20
0
140
100
180
40
120
80
160
T
J
= 125 °C
T
J
= 25 °C