Vishay semiconductors – C&H Technology VS-GB100TH120U User Manual
Page 2
VS-GB100TH120U
www.vishay.com
Vishay Semiconductors
Revision: 20-Sep-12
1
Document Number: 93413
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Molding Type Module IGBT,
2 in 1 Package, 1200 V and 100 A
FEATURES
• NPT IGBT technology
• 10 μs short circuit capability
• Low switching losses
• Rugged with ultrafast performance
• V
CE(on)
with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Switching mode power supplies
• Inductive heating
• Electronic welder
DESCRIPTION
Vishay’s IGBT power module provides ultrafast switching
speed as well as short circuit ruggedness. It is designed for
applications such as electronic welders and inductive
heating.
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
CES
1200 V
I
C
at T
C
= 80 °C
100 A
V
CE(on)
(typical)
at I
C
= 100 A, 25 °C
3.10 V
Double INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
1200
V
Gate to emitter voltage
V
GES
± 20
Collector current
I
C
T
C
= 25 °C
200
A
T
C
= 80 °C
100
Pulsed collector current
I
CM
(1)
t
p
= 1 ms
200
Diode continuous forward current
I
F
100
Diode maximum forward current
I
FM
(1)
200
Maximum power dissipation
P
D
T
J
= 150 °C
1136
W
Isolation voltage
V
ISOL
f = 50 Hz, t = 1 min
2500
V