NXP Semiconductors TDA8932B - Manual (Page 21)

TDA8932B_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 18 December 2008 21 of 48
NXP Semiconductors
TDA8932B
Class-D audio amplifier
[1] R
s
is the series resistance of inductor and capacitor of low-pass LC filter in the application.
[2] THD+N is measured in a bandwidth of 20 Hz to 20 kHz, AES17 brick wall.
[3] Maximum V
ripple
= 2 V (p-p); R
s
= 0
Ω
.
[4] B = 20 Hz to 20 kHz, AES17 brick wall.
[5] Output power is measured indirectly; based on R
DSon
measurement.
Two layer application board (55 mm × 45 mm), 35 µ m copper, FR4 base material in free air with natural convection.
V
n(o)
output noise voltage R
s
= 0
Ω
Operating mode [4] - 100 150
µ
V
Mute mode [4] - 70 100
µ
V
V
O(mute)
mute output voltage Mute mode; V
i
= 1 V (RMS) and
f
i
= 1 kHz
- 100 -
µ
V
CMRR common mode rejection ratio V
i(cm)
= 1 V (RMS) - 75 - dB
η
po
output power efficiency P
o
= 15 W; V
P
= 12 V and R
L
= 4
Ω
88 90 - %
P
o
= 30 W; V
P
= 22 V and R
L
= 8
Ω
90 92 - %
P
o(RMS)
RMS output power continuous time output power [5]
R
L
= 4
Ω
; V
P
= 12 V
THD+N = 0.5 %; f
i
= 1 kHz 11.8 13.2 - W
THD+N = 0.5 %; f
i
= 100 Hz - 13.2 - W
THD+N = 10 %; f
i
= 1 kHz 15.5 17.2 - W
THD+N = 10 %; f
i
= 100 Hz - 17.2 - W
R
L
= 8
Ω
; V
P
= 22 V
THD+N = 0.5 %; f
i
= 1 kHz 23.1 25.7 - W
THD+N = 0.5 %; f
i
= 100 Hz - 25.7 - W
THD+N = 10 %; f
i
= 1 kHz 28.9 32.1 - W
THD+N = 10 %; f
i
= 100 Hz - 32.1 - W
short time output power [5]
R
L
= 4
Ω
; V
P
= 15 V
THD+N = 0.5 % 18.5 20.6 - W
THD+N = 10 % 23.9 26.6 - W
R
L
= 8
Ω
; V
P
= 29 V
THD+N = 0.5 % 36.0 40.0 - W
THD+N = 10 % 49.5 55.0 - W
Table 13. BTL characteristics …continued
V
P
= 22 V; R
L
= 8
Ω
; f
i
= 1 kHz; f
osc
= 320 kHz; R
s
< 0.1
Ω [1] ; T
amb
= 25
°
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit