Bank interleave, Precharge to active (trp), Active to precharge (tras) – Philips Mini-ITX Mainboard EPIA-MII User Manual
Page 63: Active to cmd (trcd), Dram command rate, Dram burst len
Chapter 3
3-28
Bank Interleave
Set the interleave mode of the SDRAM interface. Interleaving allows banks
of SDRAM to alternate their refresh and access cycles. One bank will
undergo its refresh cycle while another is being accessed. This improves
performance of the SDRAM by masking the refresh time of each bank. This
field is only available when DRAM Timing is set to Manual. Settings:
Disabled, 2 Bank
,
4 Bank
Precharge to Active (Trp)
This field controls the length of time it takes to precharge a row in the
memory module before the row becomes active. Longer values are safer but
may not offer the best performance. This field is only available when DRAM
Timing is set to Manual. Settings:
2T, 3T
Active to Precharge (Tras)
This field controls the length of time a row stays active before precharging.
Longer values are safer buy may not offer the best performance. This field is
only available when DRAM Timing is set to Manual. Settings:
5T, 6T
Active to CMD (Trcd)
This field is only available when DRAM Timing is set to Manual. Settings:
2T, 3T
DRAM Command Rate
This field controls how fast the memory controller sends out commands.
Lower setting equals faster command rate. Please note that some memory
modules may not be able to handle lower settings. Settings:
2T Command, 1T
Command
DRAM Burst Len
This field sets the length of time for one burst of data during a read/write
transaction. Longer settings equals better memory performance. Settings:
4,
8