Philips CGY2014TT - Manual (Page 7)

2000 Oct 16 7
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
Performance characteristics in GSM band
handbook, halfpage
800 850
Po
(dBm)
900 1000
37
33
31
35
η
(%)
60
40
20
0
950
fRF (MHz)
FCA171
(3)
(2)
(1)
(3)
(2)
(1)
output power
efficiency
Fig.3 Output power and efficiency as a function of
the frequency.
(1) T
amb
= 85 ° C.
(2) T
amb
= 25 ° C.
(3) T
amb
= − 20 ° C.
V
DD1(LB)
= 3 V.
V
DD2(LB)
= V
DD3(LB)
= 3.5 V.
P
i(LB)
= 0 dBm.
handbook, halfpage
0 1
Po
(dBm)
2 4
40
30
10
0
20
3
VDD (V)
FCA176
(1)
(2)
(3)
Fig.4 Output power as a function of the supply
voltage.
(1) T
amb
= 85 ° C.
(2) T
amb
= 25 ° C.
(3) T
amb
= − 20 ° C.
f
RF(LB)
= 900 MHz.
P
i(LB)
= 0 dBm.
V
DD1(LB)
= 3 V.
V
DD
= V
DD2(LB)
= V
DD3(LB)
.
Performance characteristics in DCS band
handbook, halfpage
1650 1700
Po
(dBm)
1750 1850
35.5
34.5
32.5
31.5
33.5
η
(%)
55
45
25
15
35
1800
fRF (MHz)
FCA172
(3)
(2)
(1)
(3)
(2)
(1)
output power
efficiency
Fig.5 Output power and efficiency as a function of
the frequency.
(1) T
amb
= 85 ° C.
(2) T
amb
= 25 ° C.
(3) T
amb
= − 20 ° C.
V
DD1(HB)
= 3 V.
V
DD2(HB)
= V
DD3(HB)
= 3.5 V.
P
i(HB)
= 3 dBm.
handbook, halfpage
0 1
Po
(dBm)
2 4
40
30
10
0
20
3
VDD (V)
FCA173
(1)
(2)
(3)
Fig.6 Output power as a function of the supply
voltage.
(1) T
amb
= 85 ° C.
(2) T
amb
= 25 ° C.
(3) T
amb
= − 20 ° C.
f
RF(HB)
= 1750 MHz.
P
i(HB)
= 3 dBm.
V
DD1(HB)
= 3 V.
V
DD
= V
DD2(HB)
= V
DD3(HB)
.