Philips CGY2014TT - Manual (Page 4)

2000 Oct 16 4
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
PINNING
SYMBOL PIN DESCRIPTION
n.c. 1 not connected
RFI
HB
2 DCS/PCS power amplifier input
V
DD1HB
3 DCS/PCS first stage supply voltage
V
DD2HB
4 DCS/PCS second stage supply voltage
V
DD2HB
5 DCS/PCS second stage supply voltage
V
DD2LB
6 GSM second stage supply voltage
V
DD1LB
7 GSM first stage supply voltage
GND1
LB
8 GSM first stage ground
RFI
LB
9 GSM power amplifier input
n.c. 10 not connected
n.c. 11 not connected
n.c. 12 not connected
RFO/V
DD3LB
13 GSM power amplifier output and third stage supply voltage
RFO/V
DD3LB
14 GSM power amplifier output and third stage supply voltage
GND 15 ground
n.c. 16 internal connection to ground; pin should not be connected to the board
RFO/V
DD3HB
17 DCS/PCS power amplifier output and third stage supply voltage
RFO/V
DD3HB
18 DCS/PCS power amplifier output and third stage supply voltage
n.c. 19 not connected
n.c. 20 not connected
−
exposed die ground
FUNCTIONAL DESCRIPTION
Operating conditions
The CGY2014TT is designed to meet the European
Telecommunications Standards Institute (ETSI) GSM
documents, the
“ETS 300 577 specification”, which are
defined as follows:
•
t
on
= 570
µ
s
•
T = 4.16 ms
•
Duty cycle
δ
= 1 /
8
.
Multislot operation can be implemented provided that the
application circuit does not drive the IC beyond the limiting
values.
Power amplifier
The GSM and DCS/PCS power amplifiers consist of three
cascaded gain stages with an open-drain configuration.
Each drain has to be loaded externally by an adequate
reactive circuit which also has to be a DC path to the
supply.
handbook, halfpage
CGY2014TT
FCA181
1
2
3
4
5
6
7
8
9
10
n.c.
RFIHB
VDD1HB
VDD2HB
VDD2HB
VDD2LB
VDD1LB
GND1LB
RFILB
n.c.
n.c.
n.c.
RFO/VDD3HB
RFO/VDD3HB
n.c.
GND
RFO/VDD3LB
RFO/VDD3LB
n.c.
n.c.
20
19
18
17
16
15
14
13
12
11
Fig.2 Pin configuration.