Philips CGY2014TT - Manual (Page 5)

2000 Oct 16 5
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. The total power dissipation is measured under GSM pulse conditions in a good thermal environment;
see “Application Note CTT0003”.
THERMAL CHARACTERISTICS
Note
1. This thermal resistance is measured under GSM pulse conditions in a good thermal environment;
see “Application Note CTT0003”.
DC CHARACTERISTICS
V
DD
= 3.5 V; T
amb
= 25
°
C; general operating conditions applied; peak current values measured during burst; unless
otherwise specified.
Notes
1. The supply circuit includes a (drain) MOS switch with R
DSon
= 40 m
Ω
. The battery voltage is 3.6 V (typical value).
2. No RF input signal or P
i(LB)
<
−
30 dBm; V
DD
= 1 V.
3. No RF input signal or P
i(HB)
<
−
30 dBm; V
DD
= 1 V.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
DD
positive supply voltage 5.2 V
T
j(max)
maximum operating junction temperature 150
°
C
T
stg
storage temperature 150
°
C
P
tot
total power dissipation note 1 2.0 W
P
i(LB)
GSM input power 10 dBm
P
i(HB)
DCS/PCS input power 10 dBm
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-c)
thermal resistance from junction to case note 1 30 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies: pins V
DD1LB
, V
DD2LB
, RFO/V
DD3LB
, V
DD1HB
, V
DD2HB
and RFO/V
DD3HB
V
DD
positive supply voltage note 1 0 3.5 4.2 V
I
DD(LB)
GSM positive peak supply current P
i(LB)
= 0 dBm
−
2
−
A
note 2 0.5 1.5 3 A
I
DD(HB)
DCS/PCS positive peak supply current P
i(HB)
= 3 dBm
−
1.5
−
A
note 3 0.25 1 2 A