Philips CGY2014TT - Manual (Page 2)

2000 Oct 16 2
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
FEATURES
•
Operating at 3.6 V battery supply
•
Power Amplifier (PA) output power:
35 dBm in GSM band and 32.5 dBm in DCS/PCS band
•
Input power: 0 dBm in GSM band and 3 dBm in
DCS/PCS band
•
Wide operating temperature range from
−
20 to +85
°
C
•
HTSSOP20 exposed die pad package.
APPLICATIONS
•
Dual-band systems: Low Band (LB) from
880 to 915 MHz hand-held transceivers for E-GSM and
High Band (HB) from 1710 to 1910 MHz for DCS/PCS
applications.
GENERAL DESCRIPTION
The CGY2014TT is a dual-band GSM/DCS/PCS GaAs
Monolithic Microwave Integrated Circuit (MMIC) power
amplifier. The circuit is specifically designed to operate at
3.6 V battery supply voltage.
The power amplifier requires only a 30 dB harmonic
low-pass filter to comply with the transmit spurious
specification.
The voltages applied on pins V
DD
(drain) control the power
of the power amplifier and permit to switch it off.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
DD
positive supply voltage
−
3.5 4.2 V
I
DD(LB)
GSM positive peak supply current
−
2
−
A
P
o(LB)(max)
maximum output power in GSM band 34.5 35
−
dBm
I
DD(HB)
DCS/PCS positive peak supply current
−
1.5
−
A
P
o(HB)(max)
maximum output power in DCS/PCS band 32 32.5
−
dBm
T
amb
ambient temperature
−
20
−
+85
°
C
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
CGY2014TT HTSSOP20 plastic, heatsink thin shrink small outline package; 20 leads;
body width 4.4 mm SOT527-1