Pam8006a, Electrical characteristics – Diodes PAM8006A User Manual
Page 5
PAM8006A
Document number: DSxxxxx Rev. 1 - 0
5 of 13
April 2013
© Diodes Incorporated
PAM8006A
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, V
CC
= 18V, R
L
=8Ω, unless otherwise specified.)
Symbol Parameter
Conditions Min
Typ
Max
Units
P
O
Continuous Output Power
THD+N = 0.12%, f = 1kHz, R
L
= 8Ω
2.2
W
THD+N = 0.18%, f = 1kHz, R
L
= 8Ω
15
THD+N
Total Harmonic Distortion plus Noise
P
O
= 10W, f = 1kHz, R
L
= 8Ω
0.28 %
I
DD
Quiescent Current
(No Load)
18
25
mA
I
SD
Supply Quiescent Current in Shutdown
Mode
Shutdown = 0V
50
µA
R
DS(ON)
Drain-Source On-State Resisitance
I
O
= 0.5A
T
J
= +25°C
High Side
210
mΩ
Low Side
210
Total
420
PSRR
Power Supply Ripple Rejection Ratio
1V
PP
Ripple, f = 1kHz,
Inputs AC-Coupled to Ground
-65 dB
f
OSC
Oscillator Frequency
300
kHz
Vn
Output Integrated Noise Floor
20Hz to 22kHz, A-Weighting
-100
dB
CS Crosstalk
P
O
= 3W, R
L
= 8Ω, f = 1kHz
-95 dB
SNR
Signal to Noise Ratio
Maximum Output at THD+N < 0.5%,
f = 1kHz
90 dB
Gain
32 dB
|V
OS
|
Output Offset Voltage
(measured differentially)
INN and INP Connected Together
30
mV
V2P5
2.5V Bias Voltage
No Load
2.5
V
AVDD
Internal Analog Supply Voltage
V
CC
= 8V to 26V
5
5.5
V
OTS
Over Temperature Shutdown
160
°C
OTH Thermal
Hysteresis
50
°C