Pnp - electrical characteristics, Schottky - electrical characteristics, Zxtps717mc – Diodes ZXTPS717MC User Manual
Page 6: A product line of diodes incorporated
ZXTPS717MC
Document Number DS31936 Rev. 3 - 2
6 of 10
April 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTPS717MC
PNP - Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-20 -35 -
V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 16)
BV
CEO
-12 -25 -
V I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8.5 -
V I
E
= -100µA
Collector Cutoff Current
I
CBO
- -
-100
nA
V
CB
= -16V
Emitter Cutoff Current
I
EBO
- -
-100
nA
V
EB
= -6V
Collector Emitter Cutoff Current
I
CES
- -
-100
nA
V
CES
= -10V
Static Forward Current Transfer Ratio (Note 16)
h
FE
300
475
-
-
I
C
= -10mA, V
CE
= -2V
300 450 -
I
C
= -100mA, V
CE
= -2V
180 275 -
I
C
= -2.5A, V
CE
= -2V
60 100 -
I
C
= -8A, V
CE
= -2V
45 70 -
I
C
= -10A, V
CE
= -2V
Collector-Emitter Saturation Voltage (Note 16)
V
CE(sat)
-
-10
-17
mV
I
C
= -0.1A, I
B
= -10mA
- -100
-140
I
C
= -1A, I
B
= -10mA
- -100
-150
I
C
= -1.5A, I
B
= -50mA
- -195
-300
I
C
= -3A, I
B
= -50mA
- -240
-310
I
C
= -4A, I
B
= -150mA
Base-Emitter Turn-On Voltage (Note 16)
V
BE(on)
- -0.87
-0.96 V I
C
= -4A, V
CE
= -2V
Base-Emitter Saturation Voltage (Note 16)
V
BE(sat)
- -0.97
-1.07 V I
C
= -4A, I
B
= -150mA
Output Capacitance
C
obo
- 21 30 pF
V
CB
= -10V, f = 1MHz
Transition Frequency
f
T
100 110 -
MHz
V
CE
= -10V, I
C
= -50mA,
f = 100MHz
Turn-on Time
t
on
- 70 - Ns
V
CC
= -6V, I
C
= -2A
I
B1
= I
B2
= -50mA
Turn-off Time
t
off
- 130 - Ns
Schottky - Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Reverse Breakdown Voltage
BV
R
40 60 -
V
I
R
= -300µA
Forward Voltage (Note 16)
V
F
-
240
270
mV
I
F
= 50mA
- 265
290
I
F
= 100mA
- 305
340
I
F
= 250mA
- 355
400
I
F
= 500mA
- 390
450
I
F
= 750mA
- 425
500
I
F
= 1000mA
- 495
600
I
F
= 1500mA
- 420 -
I
F
= 1000mA, T
A
= 100
°C
Reverse Current
I
R
- 50
100 µA
V
R
= 30V
Diode Capacitance
C
D
- 25 -
pF
V
R
= 25V, f = 1MHz
Reverse Recovery Time
t
rr
- 12 - ns
switched from
I
F
= 500mA to I
R
= 500mA
Measured at I
R
= 50mA
Notes: 16. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%.