Diodes ZXTPS717MC - Manual (Page 4)

ZXTPS717MC
Document Number DS31936 Rev. 3 - 2
4 of 10
www.diodes.com
April 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTPS717MC
Schottky - Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Parameter Symbol Limit Unit
Continuous Reverse Voltage V R
40 V
Continuous Forward Current I
F
1.85
A
Repetitive Peak Forward Current
D = 0.5
Pulse width
≤ 300µs
I FRM
3
Non-Repetitive Peak Forward Surge Current
t ≤ 100µs
I
FSM
12
t ≤ 10ms 7
Schottky - Thermal Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Notes 10 & 13)
P
D
1.2
12
W
mW/ °C
(Notes 11 & 13)
2
20
(Notes 12 & 13)
0.9
9
(Notes 12 & 14)
1.36
13.6
Thermal Resistance, Junction to Ambient
(Notes 10 & 13)
R θJA
83.3
°C/W
(Notes 11 & 13) 51.0
(Notes 12 & 13) 111
(Notes 12 & 14) 73.5
Thermal Resistance, Junction to Lead (Note 15) R θJL 20.2
Storage Temperature Range T
STG
-55 to +150
°C
Maximum Junction Temperature T
J
125
Notes: 10. For a dual device surface mounted on 28mm x 28mm (8cm 2 ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device
is measured when operating in a steady-state condition. The heatsink is split in half with the exposed cathode and collector pads connected to each half.
11. Same as note (10), except the device is measured at t <5 sec.
12. Same as note (10), except the device is surface mounted on 31mm x 31mm (10cm
2 ) FR4 PCB with high coverage of single sided 1oz copper.
13. For a dual device with one active die.
14. For dual device with 2 active die running at equal power.
15. Thermal resistance from junction to solder-point (on the exposed cathode pad).