Diodes ZXTP08400BFF - Manual (Page 4)

ZXTP08400BFF
Issue 2 - August 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage BV
CBO
-400 -500 V I
C
= -100
␮A
Collector-emitter breakdown
voltage (base open) BV
CEO
-400 -480 V I
C
= -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Emitter-base breakdown
voltage BV
EBO
-7 -8.1 V I
E
= -100
␮A
Emitter-collector breakdown
voltage (reverse blocking) BV
ECX
-6 -8.2 V I
E
= -100
␮A, R
BC
< 1k
⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open) BV
ECO
-6 -8.6 V I
E
= -100 ␮A,
Collector-base cut-off current I
CBO
<-1 -50
-20 nA
␮A
V
CB
= -320V
V
CB
= -320V, T
amb
= 100°C
Emitter-base cut-off current I
EBO
<-1 -50 nA V
EB
= -5.6V
Collector-emitter saturation
voltage V
CE(sat)
-10 -145 mV I
C
= -20mA, I
B
= -1mA (*)
-95 -125 mV I
C
= -50mA, I
B
= -5mA (*)
-140 -220 mV I
C
= -100mA, I
B
= -10mA (*)
-140 -190 mV I
C
= -200mA, I
B
= -40mA (*)
Base-emitter saturation
voltage V
BE(sat)
-810 -900 mV I
C
= -200mA, I
B
= -40mA (*)
Base-emitter turn-on voltage V
BE(on)
-705 -800 mV I
C
= -200mA, V
CE
= -10V (*)
Static forward current
transfer ratio h
FE
100 220 I
C
= -1mA, V
CE
= -5V (*)
100 200 300 I
C
= -50mA, V
CE
= -5V (*)
100 200 I
C
= -200mA, V
CE
= -10V (*)
Transition frequency f
T
50 70 MHz I
C
= -20mA, V
CE
= -20V
f = 20MHz
Output capacitance C
obo
12.9 20 pF V
CB
= -20V, f = 1MHz (*)
Delay time t
d
95 ns V
CC
= -100V.
I
C
= -100mA,
I
B1
= 10mA, I
B2
= -20mA.
Rise time t
r
73.8 ns
Storage time t
s
1790 ns
Fall time t
f
153.8 ns