Electrical characteristics, Mmbt5401 – Diodes MMBT5401 User Manual
Page 4
MMBT5401
Document number: DS30057 Rev. 10 - 2
4 of 7
December 2013
© Diodes Incorporated
MMBT5401
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 10)
Collector-Base Breakdown Voltage
BV
CBO
-160
V
I
C
= -100μA, I
E
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
-150
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-5.0
V
I
E
= -10μA, I
C
= 0
Collector Cutoff Current
I
CBO
-50
-50
nA
μA
V
CB
= -120V, I
E
= 0
V
CB
= -120V, I
E
= 0, T
A
= +100°C
Emitter Cutoff Current
I
EBO
-50
nA
V
EB
= -4.0V, I
C
= 0
ON CHARACTERISTICS (Note 10)
DC Current Gain
h
FE
50
60
50
240
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
I
C
= -50mA, V
CE
= -5.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.2
-0.5
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
-1.0
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
6.0
pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain
h
fe
40
200
V
CE
= -10V, I
C
= -1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
100
300
MHz
V
CE
= -10V, I
C
= -10mA,
f = 100MHz
Noise Figure
NF
8.0
dB
V
CE
= -5.0V, I
C
= -200μA,
R
S
= 10Ω
f = 1.0kHz
Notes:
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.