Diodes MMBT5551 - Manual (Page 2)

MMBT5551
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
180 ⎯ V I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage V (BR)CEO
160 ⎯ V I C = 1.0mA, I B = 0
Emitter-Base Breakdown Voltage V
(BR)EBO
6.0 ⎯ V I
E
= 10 μA, I
C
= 0
Collector Cutoff Current I
CBO
⎯ 50
nA
μA V
CB
= 120V, I
E
= 0
V CB = 120V, I E = 0, T A = 100
°C
Emitter Cutoff Current I
EBO
⎯ 50 nA V
EB
= 4.0V, I
C
= 0
ON CHARACTERISTICS (Note 4)
DC Current Gain h FE
80
80
30
⎯
250
⎯
⎯
I
C
= 1.0mA, V
CE
= 5.0V
I C = 10mA, V CE = 5.0V
I
C
= 50mA, V
CE
= 5.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯
0.15
0.20
V
I C = 10mA, I B = 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯ 1.0 V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ 6.0 pF V
CB
= 10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain h
fe
50 250 ⎯ V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product f
T
100 300 MHz
V
CE
= 10V, I
C
= 10mA,
f = 100MHz
Noise Figure nF ⎯ 8.0 dB
V
CE
= 5.0V, I
C
= 200 μA,
R
S
= 1.0k Ω, f = 1.0kHz
Notes: 4. Short duration pulse test used to minimize self-heating effect.
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
400
0
1
10
1,000
100
1 10 100
h,
D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
C
V = 5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
MMBT5551
Document number: DS30061 Rev. 11 - 2
2 of 4
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August 2008
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