Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTP25100CZ User Manual
Page 5
ZXTP25100CZ
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-Base breakdown
voltage
BV
CBO
-115
-180
V
I
C
= -100
μA
Collector-Emitter
breakdown voltage
(base open)
BV
CEO
-100
-140
V
I
C
= -10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%.
Emitter-Base breakdown
voltage
BV
EBO
-7
-8.4
V
I
E
= -100
μA
Emitter-Collector
breakdown voltage
(reverse blocking)
BV
ECX
-7
-8.3
V
I
E
= -100
μA, R
BC
< 1k
Ω or -
0.25V > V
BC
> 0.25V
Emitter-Collector
breakdown voltage (base
open)
BV
ECO
-7
-8.8
V
I
E
= -100
μA
Collector-Base cut-off
current
I
CBO
<-1
-50
-0.5
nA
μA
V
CB
=-115V
V
CB
=-115V, T
amb
=100°C
Collector-Emitter cut-off
current
I
CEX
-100
nA
V
CE
= -90V, R
BE
< 1k
Ω or -
0.25V < V
BE
< 1V
Emitter-Base cut-off
current
I
EBO
<-1
-50
nA
V
EB
= -5.6V
Collector-Emitter
saturation voltage
V
CE(sat)
-140
-80
-180
-155
-210
-115
-315
-225
mV
mV
mV
mV
I
C
= -100mA, I
B
= -1 mA
(*)
I
C
= -500mA, I
B
= -50mA
(*)
I
C
= -500mA, I
B
= -20mA
(*)
I
C
= -1A, I
B
= -100mA
(*)
Base-Emitter saturation
voltage
V
BE(sat)
-860
-950
mV
I
C
= -1A, I
B
= -100mA
(*)
Base-Eitter turn-on
voltage
V
BE(on)
-800
-900
mV
I
C
=-1A, V
CE
= -2V
(*)
Static forward current
transfer ratio
h
FE
200
180
110
20
350
320
190
35
500
I
C
= -10mA, V
CE
= -2V
(*)
I
C
= -100mA, V
CE
= -2V
(*)
I
C
= -500mA, V
CE
= -2V
(*)
I
C
= -1A, V
CE
= -2V
(*)
Transition frequency
f
T
180
MHz
I
C
= -20mA, V
CE
= -15V
f
= 100MHz
Input capacitance
C
ibo
153
pF
V
EB
= -0.5V, f
= 1MHz
(*)
Output capacitance
C
obo
14.1
20
pF
V
CB
= 10V, f
= 1MHz
(*)
Delay time
t
d
15.8
ns
V
cc
= -10V, I
c
= -500mA
I
B1
= -I
B2
= -50mA
Rise time
t
r
41
ns
Storage time
t
s
411
ns
Fall time
t
f
89
ns