Diodes ZXTP25100CFH - Manual (Page 4)

ZXTP25100CFH
Document Number: DS33758 Rev. 3 - 2
4 of 7
www.diodes.com
August 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP25100CFH
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-115 -180 - V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 10) BV
CEO
-100 -140 - V I
C
= -10mA
Emitter-Base Breakdown Voltage BV
EBO
-7 -8.4 - V I
E
= -100µA
Emitter-Base Breakdown Voltage BV
ECX
-7 -8.3 - V
I
E
= -100µA, R
BC
< 1k Ω or
-0.25 < V
BC
< 0.25V
Emitter-Base Breakdown Voltage BV
ECO
-7 -8.8 - V I
E
= -100µA
Collector-Base Cutoff Current I
CBO
- < -1 -50 nA V
CB
= -115V
- - -0.5 µA V
CB
= -115V, T
amb
= 100°C
Collector-Emitter Cutoff Current I
CEX
- - -100 nA
V
CE
= -90V, R
BE
< 1k Ω or
-0.25V < V
BE
< 1V
Emitter-Base Cutoff Current I EBO
- < -1 -50 nA V EB = -5.6V
Static Forward Current Transfer Ratio (Note 10) h
FE
200 350 500
-
I
C
= -10mA, V
CE
= -2V
180 320 - I
C
= -100mA, V
CE
= -2V
110 190 - I
C
= -500mA, V
CE
= -2V
20 35 - I
C
= -1A, V
CE
= -2V
Collector-Emitter Saturation Voltage (Note 10) V
CE(sat)
- -140 -210
mV
I
C
= - 100mA, I
B
= -1mA
- -80 -110 I
C
= - 500mA, I
B
= -50mA
- -180 -310 I C = - 500mA, I B = -20mA
- -150 -220 I
C
= - 1A, I
B
= -100mA
Base-Emitter Saturation Voltage (Note 10) V
BE(sat)
- -849 -950 mV I
C
= -1A, I
B
= -100mA
Base-Emitter Saturation Voltage (Note 10) V
BE(on)
- -790 -900 mV I
C
= -1A, V
CE
= -2V
Output Capacitance C
obo
- 14.1 20 pF V
CB
= -10V, f = 1MHz
Transition Frequency f
T
- 180 - MHz
V
CE
= -15V, I
C
= -20mA,
f = 100MHz
Delay Time t
(d)
- 15.8 - ns
V CC = -10V, I C = -500mA,
I
B1
= I
B2
= -50mA
Rise Time t
(r)
- 41 - ns
Storage Time t
(s)
- 411 - ns
Fall Time t
(f)
- 89 - ns
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%