Diodes ZXTP25060BFH - Manual (Page 2)

ZXTP25060BFH
Document number: DS33374 Rev. 4 - 2
2 of 7
www.diodes.com
January 2012
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A Product Line of
Diodes Incorporated
ZXTP25060BFH
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-100 V
Collector-Emitter Voltage (forward blocking) V
CEX
-100 V
Collector-Emitter Voltage V
CEO
-60 V
Emitter-Collector Voltage (reverse blocking) V ECO -7 V
Emitter-Base Voltage V
EBO
-7 V
Continuous Collector Current I
C -3 A
Peak pulse Current I
CM
-9 A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation
Linear derating factor
(Note 4)
P
D
0.73
5.84
W
(Note 5)
1.05
8.4
(Note 6)
1.25
9.6
(Note 7)
1.81
14.5
Thermal Resistance, Junction to Ambient
(Note 4)
R θJA
171
°C/W
(Note 5) 119
(Note 6) 100
(Note 7) 69
Thermal Resistance, Junction to Lead (Note 8) R θJL 74.95
°C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
5. Same as note (4), except the device is surface mounted on 25mm x 25mm with 2 oz copper.
6. Same as note (4), except the device is surface mounted on 50mm x 50mm with 2 oz copper.
7. Same as note (6), except the device is measured at t<5secs.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).